1. Product Scientific Research and Structural Stability

1.1 Crystal Chemistry and Bonding Characteristics

(Silicon Carbide Crucibles)

Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms prepared in a tetrahedral latticework, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing outstanding atomic bond strength.

The Si– C bond, with a bond power of approximately 318 kJ/mol, is among the greatest in architectural ceramics, giving exceptional thermal security, firmness, and resistance to chemical assault.

This robust covalent network causes a product with a melting point going beyond 2700 ° C(sublimes), making it one of the most refractory non-oxide ceramics readily available for high-temperature applications.

Unlike oxide porcelains such as alumina, SiC maintains mechanical toughness and creep resistance at temperatures over 1400 ° C, where lots of metals and traditional porcelains begin to soften or break down.

Its low coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) enables fast thermal biking without tragic breaking, a vital feature for crucible performance.

These innate properties stem from the well balanced electronegativity and similar atomic sizes of silicon and carbon, which advertise a very secure and largely packed crystal framework.

1.2 Microstructure and Mechanical Durability

Silicon carbide crucibles are normally made from sintered or reaction-bonded SiC powders, with microstructure playing a definitive function in longevity and thermal shock resistance.

Sintered SiC crucibles are generated with solid-state or liquid-phase sintering at temperature levels over 2000 ° C, commonly with boron or carbon additives to enhance densification and grain limit cohesion.

This process yields a fully thick, fine-grained framework with very little porosity (

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